ASI diodes

ASI.ASI was established in March 2015 with a registered capital of 129.78 million yuan. Located in Shunyi District, Beijing, the company occupies a site area of 28,100 square meters and has a total floor area of 71,000 square meters. The company’s core business involves the design, production, and sale of third-generation semiconductor gallium nitride (GaN) and silicon carbide (SiC) chips and devices. Its GaN RF power amplifier chips have reached internationally leading standards and have been deployed on a large scale by major global telecommunications companies; its SiC diode and MOSFET products are at the forefront of international technology and have begun mass production for use in the new energy vehicle sector. The company’s main products include SiC MOSFETs and Schottky diodes.