ASI Schottky diodes

ASI.ASI was established in March 2015 with registered capital of nearly 130 million yuan, headquartered in Shunyi District, Beijing. The company specializes in third-generation semiconductor materials, focusing on the design, manufacturing, and sales of gallium nitride (GaN) and silicon carbide (SiC) chips and devices. Its GaN RF power amplifier chips achieve internationally leading performance levels and are widely deployed in mainstream global communication equipment. Its SiC diodes and MOSFET products also reach internationally advanced standards and have achieved mass application in the new energy vehicle sector. Core products include SiC MOSFETs and Schottky diodes.