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ASI diodes

ASI diodes

ASI.

ASI diodes

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Product Detail

ASI.ASI was established in March 2015 with a registered capital of RMB 129.78 million. Located in Shunyi District, Beijing, the company occupies a site area of 28,100 square meters with a total floor space of 71,000 square meters. Its core business involves the design, production, and sales of third-generation semiconductor GaN and SiC chips and devices. Its GaN RF power amplifier chips achieve internationally leading performance and have been deployed at scale by major global telecommunications companies. Its SiC diodes and MOSFET products represent internationally advanced technology and have commenced mass application in new energy vehicles. Key products include: SiC MOSFETs and Schottky diodes.

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Product Detail

ASI.ASI was established in March 2015 with a registered capital of RMB 129.78 million. Located in Shunyi District, Beijing, the company occupies a site area of 28,100 square meters with a total floor space of 71,000 square meters. Its core business involves the design, production, and sales of third-generation semiconductor GaN and SiC chips and devices. Its GaN RF power amplifier chips achieve internationally leading performance and have been deployed at scale by major global telecommunications companies. Its SiC diodes and MOSFET products represent internationally advanced technology and have commenced mass application in new energy vehicles. Key products include: SiC MOSFETs and Schottky diodes.

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ASI diodes

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