CGEE.CGEE was established on February 9, 2012, with its registered office located in the Nanjing Economic and Technological Development Zone. CGEE specializes in the R&D, production, and sales of crystal growth equipment and material preparation technologies, focusing on overcoming technical challenges in key equipment such as large-size semiconductor-grade monocrystalline silicon furnaces, silicon carbide (SiC) crystal growth furnaces, substrate processing equipment, and epitaxial growth equipment. Through continuous innovation, CGEE breaks foreign technological monopolies, advances the localization of high-end semiconductor equipment, and safeguards the security of China's semiconductor supply chain. The company's core management and R&D team possess extensive international semiconductor industry experience, with over 20 years of expertise in the field. Distinct from traditional equipment suppliers, they offer rich expertise in thermal field design and process development, enabling them to accelerate product development speed and quality for clients while providing tailored equipment customization. The company prioritizes talent cultivation and R&D team development, continuously attracting top professionals to expand its research capabilities. This has formed relatively independent R&D teams, enabling efficient operations in talent management, product development, and technological innovation. This structure allows the company to rapidly respond to evolving R&D demands and pursue continuous technological advancement. Key products include: semiconductor-grade monocrystalline silicon furnaces, photovoltaic automatic control system equipment, silicon carbide monocrystalline furnaces, crystal material processing equipment, silicon carbide epitaxial furnaces, and other crystal growth equipment.
