SEMISIC.SEMISIC was established in 2018 and is located in the Shanxi Comprehensive Reform Demonstration Zone in Taiyuan City, Shanxi Province. It is a leading domestic enterprise engaged in the production and R&D of third-generation semiconductor material silicon carbide (SiC). Through independent innovation and R&D, the company has comprehensively mastered the manufacturing of silicon carbide growth equipment, the preparation process for high-purity silicon carbide powder, and the fabrication techniques for n-type silicon carbide single crystal substrates and high-purity semi-insulating silicon carbide single crystal substrates. This has enabled the establishment of a complete production line encompassing silicon carbide powder preparation, single crystal growth, and wafer processing. It pioneered the development of 4-, 6-, and 8-inch high-purity semi-insulating SiC single crystal substrate technology in China, breaking through the long-standing foreign embargo on SiC crystal growth technology. As the nation's first enterprise to achieve self-sufficiency in SiC material supply, Primary products include: high-purity silicon carbide wafers, n-type conductive silicon carbide wafers, silicon carbide single crystal growth furnaces, silicon carbide ingots, and nitrogen-doped SiC powder.
