SICC silicon carbide

SICC.SICC was established in November 2010 as a technology enterprise specializing in the R&D, production, and sales of silicon carbide (SiC) single crystal substrate materials. Guided by the philosophy of “Advanced · Quality · Sustainability,” the company prioritizes customer needs and has independently mastered the intricate process of growing precision SiC single crystals under high-temperature, low-pressure conditions. As a wide-bandgap semiconductor, this material exhibits outstanding physical properties that significantly enhance the power density and performance of power electronics and microwave electronic devices. Leveraging its exceptional R&D team and years of industrialization experience, SICC is committed to providing integrated solutions centered on substrates through technological leadership and quality enhancement, aiming to become an internationally renowned semiconductor company. Its primary products include conductive and semi-insulating silicon carbide substrates.